| abstract |
【Task】 In a lead-free connection material used for a semiconductor device such as a power module, the stress buffer function sometimes deteriorates when exposed to a temperature higher than a normal temperature range. [Solution] The region including the outermost layer is a Zn-based layer, a connection material having a plurality of floating island-like Al-based phases 3 inside, and by connecting the two members 1 and 2 with the connection material, wetting with Al oxide In addition to suppressing deterioration of heat resistance and heat resistance, the Al-based phase 3 provides stress buffering at the time of connection, and even when the Al-based phase 3 is hardened during use, the Zn-Al alloy layer 4 ensures flexibility and the connection material. It is possible to suppress a decrease in the stress buffer function. [Selection] Figure 5 |