| abstract |
The present invention discloses a method for forming silicon nitride, silicon oxynitride, silicon oxide, carbon doped silicon nitride, carbon doped silicon oxide, carbon doped oxynitride films at low deposition temperatures. The silicon-containing precursors used for this deposition are monochlorosilane (MCS) and monochloroalkylsilane. This method is preferably performed by using plasma atomic layer deposition, plasma enhanced chemical vapor deposition, and plasma cyclic chemical vapor deposition. [Selection figure] None |