| abstract |
A process is provided for etching a silicon-containing substrate to form a nanowire array. In this process, one may apply metal on the substrate in such a way that the metal is present where it is desired to etch and touches the silicon and is otherwise blocked or absent from touching the silicon. Nanoparticles and metal films are deposited. One sinks the metallized substrate into an aqueous etch solution containing HF and an oxidizing factor. In this manner, an array of nanowires having a controlled diameter and length is produced. |