| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S977-749
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S977-762 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02636
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02645
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02521
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02439
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02422
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0676
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0673
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0665
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02573
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02653
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02603 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B01J23-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82B3-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B33-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 |
| filingDate |
2008-09-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2011-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2011504291-A |
| titleOfInvention |
Semiconductor nanowires with controlled doping and method for manufacturing the same |
| abstract |
PROBLEM TO BE SOLVED: To provide a method for forming a semiconductor nanowire having a constant lateral dimension and a significant doping level. Catalyst particles on a substrate are exposed to a reactant containing semiconductor material in a reactor. Intrinsic semiconductor nanowires having a certain lateral dimension are grown at a sufficiently low temperature to suppress thermal decomposition of reactants on the sidewalls of the intrinsic semiconductor nanowires. Once the intrinsic semiconductor nanowire has grown to the desired length, the temperature in the reactor is increased so that pyrolysis on the sidewalls of the semiconductor nanowire is possible, after which the dopant is fed into the reactor containing the reactants. A composite semiconductor nanowire is formed having an inner intrinsic semiconductor nanowire and a doped semiconductor shell. The catalyst particles are removed and then annealed to uniformly distribute the dopant throughout the volume of the composite semiconductor nanowire, resulting in the formation of a semiconductor nanowire having a constant lateral dimension and a substantially uniform doping. [Selection] Figure 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11364520-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107004727-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017539085-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10692719-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10919074-B2 |
| priorityDate |
2007-10-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |