http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011253989-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02B6-13 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02B6-122 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02B6-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-025 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026 |
| filingDate | 2010-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ac0b5ae65942a9dc2587a3395a211a32 |
| publicationDate | 2011-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2011253989-A |
| titleOfInvention | Manufacturing method of integrated optical semiconductor device |
| abstract | A waveguide of a buried element and a waveguide of a high mesa ridge element are prevented from being shifted. A semiconductor multilayer structure and a semiconductor multilayer structure are formed side by side on an n-type InP substrate. A p-type InGaAs contact layer 36 is formed on the semiconductor stacked structures 30 and 32. The p-type InGaAs contact layer 36 is patterned to remove the p-type InGaAs contact layer 36 on the semiconductor multilayer structure 30. The semiconductor laminated structure 30 is etched to form a waveguide ridge 40, and the p-type InGaAs contact layer 36 and the semiconductor laminated structure 32 are etched to form a high mesa ridge. Both sides of the waveguide ridge 40 are embedded with embedded layers 44, 46 and 48. A p-type InGaAs contact layer 52 is formed on the waveguide ridge 40 and the buried layer in the vicinity thereof. Using the p-type InGaAs contact layers 36 and 52 as a mask, the buried layer is etched to form a buried element and a high mesa ridge element. [Selection] Figure 28 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9484714-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016171135-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105977787-A |
| priorityDate | 2010-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID313 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419557048 |
Total number of triples: 19.