| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_67ddb426ec27b4566aa864c9a6ed9d1c |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-24355 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02447
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02529
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0237
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02614
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02661
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02494 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate |
2010-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7438cabc084b3fa33b1236d361d77e06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6d7450615bc0fa0013e1fbc374ef5494
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6938b608013cf26249dfe4b70ffcc49e |
| publicationDate |
2011-11-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2011225421-A |
| titleOfInvention |
Method for producing single crystal 3C-SiC substrate and single crystal 3C-SiC substrate obtained thereby |
| abstract |
A method of manufacturing a single crystal 3C-SiC substrate capable of greatly reducing surface defects generated in an epitaxial growth process and ensuring quality as a semiconductor device while simplifying a post-process. A method for manufacturing a single crystal 3C-SiC substrate, wherein a single crystal 3C-SiC layer is formed on a base substrate by epitaxial growth, comprising: A first growth step of forming the single crystal 3C-SiC layer so as to have a surface state comprising a highly flat surface and surface pits interspersed therein; The single crystal 3C-SiC layer obtained in the first growth stage is subjected to a second growth stage in which epitaxial growth is performed so as to fill the surface pits on the surface in the desorption-controlled region. [Selection figure] None |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20140003017-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013179121-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7290135-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2013180485-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9422640-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9903048-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017183589-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104395986-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9752254-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101976600-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9324561-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101897062-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2013180433-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20130134939-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102014205466-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104412362-A |
| priorityDate |
2010-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |