| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ed62b7551998e54b35784cdbbb2778d5 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67098
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02167
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45531
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67017
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B21-082 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-36 |
| filingDate |
2010-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3cd060bc4a3d9ce9aba67e94c46a132b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8130a41277b689973e42a2031d3b828e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_860efc4f8b0df2b206d5e4bc4985f31a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3fbb44306002ee5ea037cc55f7bed0f5 |
| publicationDate |
2011-10-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2011216846-A |
| titleOfInvention |
Semiconductor device manufacturing method, substrate processing method, and substrate processing apparatus |
| abstract |
A film quality superior to a conventional film quality is realized by modifying a conventional film type. A process vessel for forming a first layer containing a predetermined element on a substrate by supplying a source gas containing the predetermined element into a processing vessel containing a substrate under conditions in which a CVD reaction occurs. Supplying a carbon-containing gas therein, forming a layer containing carbon on the first layer, forming a second layer containing a predetermined element and carbon, and a CVD reaction in the processing vessel A step of forming a third layer containing the predetermined element and carbon by further forming a layer containing the predetermined element on the second layer by supplying the source gas under the generated conditions; The step of nitriding the third layer by supplying a nitrogen-containing gas to form a carbonitriding layer as a fourth layer containing a predetermined element, carbon, and nitrogen is defined as one cycle, and this cycle is repeated a predetermined number of times. By doing so, a carbonitride film having a predetermined thickness is formed on the substrate. [Selection] Figure 4 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I618810-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10388530-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020126925-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7175210-B2 |
| priorityDate |
2010-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |