http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011216580-A

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_435f7fafc4b931eae59de228af7272de
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34
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filingDate 2010-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2a39e4dcaba5b01a1f0f24825594746b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cd58b8ea2744194d010822eb8500a4dd
publicationDate 2011-10-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2011216580-A
titleOfInvention Group III nitride semiconductor growth method
abstract A method for growing a group III nitride semiconductor capable of growing a group III nitride semiconductor crystal having a relatively small film thickness and good crystallinity is provided. A group III nitride semiconductor growth method according to the present invention includes a first step of forming a group III nitride semiconductor crystal nucleus (40) in an island shape on a substrate (10), and a nitrogen source gas. While supplying silicon source gas and group III source gas alternately, a second step of growing the crystal nuclei (40) in an island shape, and after the second step, nitrogen source gas and III A third step of supplying a group source gas and growing a group III nitride semiconductor from each of the island-shaped crystal nuclei (40) to form a layered group III nitride semiconductor (45). It is characterized by. [Selection] Figure 1
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014179628-A
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priorityDate 2010-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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