http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011216134-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f56b5174f7d196258707ccf1d609796e |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247 |
filingDate | 2010-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_960c577898977119c291c15b3e35f481 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0d449c8b47289e9ba7cf157362814dbc |
publicationDate | 2011-10-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2011216134-A |
titleOfInvention | Nonvolatile semiconductor memory and method for writing to nonvolatile semiconductor memory |
abstract | A peripheral circuit of a non-volatile semiconductor memory is reduced and contributes to the reduction of an integrated circuit. An n-type diffusion layer formed on a p-type substrate and connected to a source line, a word electrode provided on the p-type substrate and connected to a word line, a p-type substrate, A word insulating layer provided between the word electrodes 200, a tunnel insulating layer provided on the n-type diffusion layer 50 and on the side wall of the word electrode 200, a charge storage layer provided on the tunnel insulating layer, A control insulating layer provided on the storage layer; and a control electrode 300 provided on the control insulating layer and connected to the control line 420. When the controller performs writing to the memory element 600, the source line A non-volatile semiconductor memory that applies a positive voltage to 430, applies a negative voltage to the word line 400, and applies a positive voltage to the control line 420. [Selection] Figure 1 |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9244714-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018107300-A |
priorityDate | 2010-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.