http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011205148-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0950e9df7f0e1b73efee1bda859951ad |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 |
| filingDate | 2011-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9ba4367cb09dbe7d4fc82fb62bb0bcb9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_027ab6adf830d5c774474a2cdddce1c4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a0e87bbb418c7b0e41f261866fafe414 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_39e6f8553869d302045c9ad1bd6bb0d2 |
| publicationDate | 2011-10-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2011205148-A |
| titleOfInvention | Semiconductor device |
| abstract | A semiconductor device capable of preventing diffusion of impurities into an active layer is provided. A laser diode includes an n-type GaN buffer layer 2 formed on an n-type GaN substrate 1, an n-type cladding layer 3 formed thereon, and an n-type guide layer 4 formed thereon. An active layer 5 formed thereon, a p-type first guide layer 6 formed thereon, an overflow prevention layer 7 formed thereon, and an impurity diffusion prevention layer formed thereon 8, a p-type GaN second guide layer 9 formed thereon, and a p-type cladding layer 10 formed thereon. In order to provide the impurity diffusion prevention layer 8 made of In y Ga 1-y N in the vicinity of the active layer 5, the p-type impurities existing inside the p-type cladding layer 10 and the p-type second guide layer 9 are diffused into the impurity. The p-type impurities can be accumulated in the prevention layer 8 and do not diffuse into the active layer 5. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9306119-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010532926-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111193187-A |
| priorityDate | 2011-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.