http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011204931-A

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filingDate 2010-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e8fe4bc1d4de83e9f12f09403c6e47e1
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publicationDate 2011-10-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2011204931-A
titleOfInvention Vapor phase growth method of group III-V compound semiconductor
abstract Provided is a method for vapor phase growth of a III-V group compound semiconductor capable of burying and growing a structure that has been processed to be rugged over the entire surface of a wafer and capable of stable burying and flattening regardless of the rugged shape. . On the surface of a III-V group compound semiconductor substrate, a quaternary III-V group compound semiconductor layer having regular irregularities is formed by metal organic vapor phase epitaxy. After the III-V compound semiconductor layer serving as a protective film for suppressing thermal deformation is epitaxially grown at the first growth temperature to a predetermined film thickness, a second growth temperature higher than the first growth temperature is obtained. The semiconductor layers having the same composition were grown continuously until the total thickness was larger than the height of the irregularities. [Selection] Figure 1
priorityDate 2010-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 22.