http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011199105-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0950e9df7f0e1b73efee1bda859951ad |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2010-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c372ff05956379bf96e5bfd038daf378 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8115a8cfb8956b37276adeecdb1c2ccb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9c3fded2670238637beb4c6baa04c6f1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_990349aefe2dab1e21be865b6fecd9a8 |
| publicationDate | 2011-10-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2011199105-A |
| titleOfInvention | Manufacturing method of semiconductor device |
| abstract | A semiconductor device manufacturing method capable of growing an epitaxial crystal having good crystallinity on a semiconductor layer. A method of manufacturing a semiconductor device includes forming nanowires 14 extending in a predetermined direction from a precursor film formed on a semiconductor substrate 10 via an insulating film, and forming gates on both side surfaces and upper surfaces of the formed nanowires 14. A gate electrode 18 is formed so as to cross a predetermined direction of the nanowire 14 through an insulating film, gate sidewalls 22 are formed on both side surfaces of the formed gate electrode 18, and the nanowire 14 exposed after the formation of the gate sidewall 22 is formed. It includes growing an epitaxial crystal on the surface to form an epitaxial layer 24, forming the epitaxial layer 24, and then introducing impurities into the nanowire 14 to form an extension region. [Selection] Figure 2B |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018537867-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017505986-A |
| priorityDate | 2010-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.