http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011192913-A

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7af673589ca45d2fd8b9ea902cdbd1dc
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-042
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026
filingDate 2010-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2e9afc07a008a17148e14c81ae35027e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ee040e5522c2c41bec158320bd7aa5d8
publicationDate 2011-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2011192913-A
titleOfInvention Semiconductor laser structure
abstract To provide a semiconductor laser structure in which a tunnel junction layer has a high tunneling efficiency and does not easily confine or absorb light in the tunnel junction layer. A laser structure in which (a) n-type cladding layers 2 and 8, (b) light emitting layers 3, 4, 5, 9, 10, 11 and (c) p-type cladding layers 5 and 12 are laminated. A plurality of units 101 and 103 are provided, and a tunnel junction layer 7 including a p-type conductivity type layer 7a and an n-type conductivity type layer 7b is provided between the laser structural units 101 and 103, and the p-type conductivity type layer 7a The band gap energy in at least one layer of the n-type conductivity type layer 7b is not uniform, and the band gap energy at the interface between the p-type conductivity type layer 7a and the n-type conductivity type layer 7b is the tunnel junction. A semiconductor laser structure characterized in that it is smaller than the average value of the band gap energy in the layer 7. [Selection] Figure 1
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7101470-B2
priorityDate 2010-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 38.