| abstract |
It is difficult to significantly improve characteristics in terms of detection output, oscillation output, and the like. A microwave device includes a magnetization free layer having an in-plane magnetization film, a magnetization fixed layer having an in-plane magnetization film, and a tunnel barrier layer provided between the magnetization free layer and the magnetization fixed layer. 104, an external magnetic field application mechanism 302 that applies an external magnetic field of 3 ° or more and 30 ° or less from an axis in the direction perpendicular to the film surface of the magnetoresistive device, and a magnetization fixed layer 105 The ratio of the demagnetizing field in the direction perpendicular to the film surface of the magnetization free layer 103 to the demagnetizing field in the direction perpendicular to the film surface is 0.5 or less. [Selection] Figure 1 |