http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011176249-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_12d24c0a12c3ecdb6d9a47d623d96e76 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-739 |
| filingDate | 2010-03-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ee786dd093a96eff4eb6db98eb424e57 |
| publicationDate | 2011-09-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2011176249-A |
| titleOfInvention | Semiconductor device |
| abstract | Provided is a semiconductor device that uses a low-cost manufacturing process as much as possible, has a high yield rate, has a large IE effect, has a low on-voltage, and can suppress a local electric field concentration to increase a withstand voltage. An active region in which a main current on one main surface side of an n-type silicon semiconductor substrate 1 flows is circular or oval centered at a position corresponding to an intersection of lattice-like line patterns orthogonal to each other at a predetermined pitch. A ring-shaped surface, and a ring-shaped projecting semiconductor region 5 having a stack of an n-type emitter region 4 and a p-type base layer 2 from the ring-shaped surface side toward the lower layer. The region surrounded by the orthogonal lattice-like line pattern is arranged with a size that is less than 50% of the region, and the region other than the protruding semiconductor region 5 in the active region is deeper than the p-type base layer 2 The semiconductor device is provided with a recessed portion reaching a position, and a gate electrode 7 is provided on the sidewall of the recessed portion on the outer peripheral side of the protruding semiconductor region 5 via a gate insulating film 6. [Selection] FIG. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013258190-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9178049-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015162533-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10319844-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10290729-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9082814-B2 |
| priorityDate | 2010-01-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.