| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f56b5174f7d196258707ccf1d609796e |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76883
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76826
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76832 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2010-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ecf3b42ddaf4a58d426d716bd048da08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0663b484e8488ba1190698d255729311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8873ea934cf835d3d517c271038ac53e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_377fba54de116e1997f642efe5185f14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3ea93bfad3b1c9b25127e03527f890c3 |
| publicationDate |
2011-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2011166106-A |
| titleOfInvention |
Semiconductor device manufacturing method and semiconductor device |
| abstract |
An insulating film having a lower relative dielectric constant is formed without deteriorating element reliability. In this method of manufacturing a semiconductor device, a step of plasma-polymerizing cyclic siloxane on a base film 101 to form a first insulating film 102 and a process of forming the first insulating film 102 are continuously performed. In particular, a step of plasma-polymerizing cyclic siloxane on the first insulating film 102 to form the second insulating film 103 is included. The deposition rate of the first insulating film 102 is slower than the deposition rate of the second insulating film 103. [Selection] Figure 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016129259-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013235925-A |
| priorityDate |
2010-01-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |