http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011157235-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ed62b7551998e54b35784cdbbb2778d5 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-20 |
| filingDate | 2010-02-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_54bee6471652aba479cd2ddd76e658a7 |
| publicationDate | 2011-08-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2011157235-A |
| titleOfInvention | Crystal manufacturing apparatus and crystal manufacturing method |
| abstract | A crystal manufacturing apparatus and a crystal manufacturing method capable of manufacturing a crystal capable of efficiently cutting a large number of substrates in a short time and improving the productivity of crystal manufacturing when growing a crystal such as GaN. I will provide a. A seed crystal material holding table 217 for holding a seed crystal material 200 formed in a rod shape, and a seed crystal material 200 held on the seed crystal material holding table 217 are carried in, and a crystal is formed on the surface of the seed crystal material 200. , A heating unit 206 that is disposed outside the processing chamber 201 and heats the inside of the processing chamber 201, a source gas supply unit that supplies a predetermined gas into the processing chamber 201, and an atmosphere in the processing chamber A gas discharge unit 231 for discharging the gas. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013060347-A |
| priorityDate | 2010-02-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.