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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-509
filingDate 2010-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_034e63e0c5bea1534de8ac9723720a79
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bdbf9dbc2b87885e7edb5a8f172d403e
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publicationDate 2011-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2011137225-A
titleOfInvention Plasma CVD film forming apparatus and film forming method
abstract A film quality and a barrier property are improved. In a plasma CVD film forming apparatus 10 for continuously forming a film on a substrate, a film forming roll 20 including a first film forming roll 20A and a second film forming roll 20B, a first film forming roll and a first film forming roll The first symmetry plane 18A, which is located between the two film-forming rolls, bisects the line segment connecting the rotation axis 20Aa and the rotation axis 20Ba with the shortest distance, and is orthogonal to the line segment, and the first component. A second symmetry plane 18B that bisects the entire length of the film roll and the second film formation roll and is orthogonal to the first symmetry plane is set, and is a mirror surface with respect to the first symmetry plane and the second symmetry plane 1 or 2 arranged so as to be symmetrical, or arranged so as to be axially symmetric with respect to an intersecting line 19 defined by intersecting the first symmetry plane and the second symmetry plane. A vacuum chamber 12 having the above-described vacuum exhaust port 14 and storing a film-forming roll; Plasma CVD film forming apparatus comprising a gas supply unit 30, and a vacuum pump provided outside the vacuum chamber. [Selection] Figure 1-1
priorityDate 2009-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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