| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e3b0a3dbf8d6c9712d86ea1383fd5327 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G4-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-468
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G4-33
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G4-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B3-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-64
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-00 |
| filingDate |
2009-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2ea96810768ba69da4b8c196b10e1724
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d8bf49d5b78bfca08a668c2efced2ed1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_39484a3a19f976aec5b46fadbba446af |
| publicationDate |
2011-07-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2011134553-A |
| titleOfInvention |
Method for forming dielectric thin film and dielectric thin film formed by the method |
| abstract |
A method for forming a dielectric thin film capable of exhibiting high tunability and high dielectric constant when used in a thin film capacitor and the like, and the dielectric thin film are provided. A process for applying a dielectric thin film forming composition to a heat-resistant substrate and drying is repeated to obtain an unfired film of a composition having a desired thickness, and then the unfired film formed on the substrate is formed. In the method of forming a dielectric thin film by firing, when the dielectric thin film to be formed is a thin film containing a perovskite oxide as a main component, firing of the unfired film formed on the substrate is performed at 60 to 6000 ° C. / It comprises at least a primary firing by rapid heating at a minute and a secondary firing by slow heating at a rate of 0.5 to 30 ° C./minute in this order. [Selection] Figure 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103130502-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103130502-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015133360-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016032015-A |
| priorityDate |
2009-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |