| abstract |
PROBLEM TO BE SOLVED: To provide a semiconductor substrate in which the flatness of each semiconductor layer crystal-grown on a GaN substrate is improved in a size equivalent to the size of a semiconductor element, and further, a semiconductor with improved performance based on this semiconductor substrate. A light-emitting element and a semiconductor element are provided. A substrate 11, a nitride III-V compound semiconductor single crystal layer 12 stacked on the substrate 11, and a substrate 11 and a nitride III-V compound semiconductor single crystal layer 12 are disposed between the substrate 11 and the nitride III-V compound semiconductor single crystal layer 12. And a layer 10 containing 5 × 10 17 cm −3 or more and 2 × 10 19 cm −3 or less of the impurity element. [Selection] FIG. |