http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011121815-A

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Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-36
filingDate 2009-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aaa4ee2c6117aceb641f98a623d536cb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a6e61c8569c032f58525d802e4e83f69
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b901c15d280422f25e81b3b5b10220ee
publicationDate 2011-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2011121815-A
titleOfInvention Single crystal manufacturing method
abstract The present invention provides a method for producing a single crystal, in which a high-quality single crystal can be grown using a seed crystal fixed on a pedestal. A seed crystal 11 having first and second faces P1, P2 and made of silicon carbide is prepared. The surface of seed crystal 11 is carbonized such that first carbonized layer 22a is formed on first surface P1. The first carbonized layer 22a and the pedestal 41 are brought into contact with each other with the adhesive interposed therebetween. The adhesive is hardened to fix the seed crystal 11 to the pedestal 41. A single crystal 52 is grown on the second surface P <b> 2 of the seed crystal 11 fixed to the pedestal 41. [Selection] Figure 4
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2014192904-A1
priorityDate 2009-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 39.