http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011116575-A

Outgoing Links

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B33-06
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filingDate 2009-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_578cc5a90a77c57eef8eb513ff3da210
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_071baca356d64271756b8bfc05781d03
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publicationDate 2011-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2011116575-A
titleOfInvention Magnesium silicide manufacturing method, magnesium silicide, electrode member, and thermoelectric element
abstract A method for producing high-purity magnesium silicide with high efficiency is provided. A method of manufacturing a magnesium silicide according to the present invention includes a step (S10) of preparing a processing object mainly composed of Si, and the processing object is heated in a state where the processing object is heated. And a step of contacting the steam (S20). It is preferable that the heating temperature of the object to be treated when the step of contacting Mg vapor (S10) is 500 ° C. or higher and 1500 ° C. or lower. In the step of bringing the Mg vapor into contact, it is preferable to place the object to be processed in an atmosphere containing at least one gas selected from the group consisting of Ar and He. [Selection] Figure 1
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110574172-A
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priorityDate 2009-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 25.