| abstract |
Silicides that can be used for various purposes in semiconductor and advanced packaging technologies such as gate electrodes, ohmic contacts, interconnect lines, Schottky barrier diode contacts, photovoltaics, solar cells and optoelectronic component formation A forming method for reducing the number of nickel forming steps is provided. A silicon-containing substrate is coated with nickel, the nickel is coated with a protective layer, and the combination is heated to a temperature sufficient to form nickel silicide. This nickel silicide formation can be performed in an oxygen-containing environment. [Selection figure] None |