http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011101062-A

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1af8df51ce24ca931ae718fb747f6aa0
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12
filingDate 2011-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dbf3615ba5f0eb07d4b30c10c7b7a26a
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publicationDate 2011-05-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2011101062-A
titleOfInvention Method for manufacturing thin film semiconductor device
abstract PROBLEM TO BE SOLVED: To provide a thin film semiconductor device with few steps and less influence on a device forming layer at the time of separation. [Solution] A step of forming a separation layer comprising a porous layer on the semiconductor substrate by anodizing the semiconductor substrate; a step of forming a semiconductor film on the separation layer; Alternatively, a step of forming a semiconductor integrated circuit, and a notch groove formed in the semiconductor film from the surface side of the semiconductor film, the leading end of the notch groove being formed between the semiconductor substrate, the inside of the separation layer, or the semiconductor film and the separation layer. A part of the region of the semiconductor element and / or semiconductor integrated circuit in the separation layer by applying heat, vibration, or external force to the separation layer after the step of forming to be located at the interface and the groove formation step Separating from the member. [Selection] Figure 1
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Total number of triples: 23.