http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011096727-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f56b5174f7d196258707ccf1d609796e |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788 |
| filingDate | 2009-10-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5bbd02eeb6c39a604a9df128dfd7ce03 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_34f621252d9770fa9422cb372b683d48 |
| publicationDate | 2011-05-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2011096727-A |
| titleOfInvention | Manufacturing method of semiconductor device |
| abstract | In a semiconductor device having a MISFET that requires a relatively large current driving force at a low voltage and a MISFET that requires a high breakdown voltage for high-speed operation, each element is improved while improving its element characteristics. Manufactured in a simplified process. When forming side walls A and B on the side walls of a gate electrode 4 of a low breakdown voltage MISFET and a memory gate electrode 8 of a MONOS memory, an oxidation that can be deposited at a low temperature without using a dedicated mask. A film is formed on the silicon substrate 1 on which a photoresist film is formed, and side walls A and B having different widths are formed on the side walls of the gate electrode 4 and the memory gate electrode 8, respectively. [Selection] Figure 7 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111668126-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111668126-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10157932-B2 |
| priorityDate | 2009-10-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.