| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38e136555b421e3d93138177b05a40a3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b0120933550ea729b9f3186c3772531b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6dd74b20fbf2e0ebf10c7bfad4f6c8c5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0950e9df7f0e1b73efee1bda859951ad |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01B13-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N60-0632
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01B12-06 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01G1-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B13-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01F5-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B12-06 |
| filingDate |
2009-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eb161036feaee4092058af94a1ea5a05
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d8ad93bdcef91461237f3fa4afa846c1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_923ad0e6c0486cdda9a18639caf030b8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3fa3f6305bdf6ec921082836454ac1c6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c29ade096ff8eac39cf2d56d3f02d0a5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d6f19aa1e29664a1981aacafabfd5784 |
| publicationDate |
2011-05-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2011096556-A |
| titleOfInvention |
Base material for oxide superconducting conductor and method for producing the same, oxide superconducting conductor and method for producing the same |
| abstract |
The present invention provides a technique capable of obtaining excellent crystal orientation without using an LMO underlayer which has been conventionally required in a cap layer having a high degree of orientation as an underlayer of an oxide superconducting layer. Objective. The present invention relates to a metal substrate, an MgO intermediate layer formed on the metal substrate by an ion beam assist method (IBAD method), and the intermediate layer formed directly on the intermediate layer. 3 is a base A for an oxide superconducting conductor comprising a cap layer 5 exhibiting a crystal orientation superior to the crystal orientation of No. 3, and before forming the cap layer 5 on the MgO intermediate layer 3 A humidification process is performed, and the cap layer 5 has an excellent self-orientation and has a crystal orientation superior to that of the intermediate layer 3. [Selection] Figure 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013057099-A |
| priorityDate |
2009-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |