http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011093803-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-18
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filingDate 2011-02-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8d30da13bc3d3dc98c7054917de4482e
publicationDate 2011-05-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2011093803-A
titleOfInvention Method for producing gallium nitride compound semiconductor single crystal
abstract PROBLEM TO BE SOLVED: To provide a method for producing a gallium nitride compound semiconductor single crystal capable of preventing destruction of a substrate or an epitaxial layer at the time of cooling after completion of growth, and capable of peeling from the substrate while maintaining the shape of the epitaxial layer. This is the issue. After epitaxial growth of a gallium nitride compound semiconductor (eg, GaN) crystal on a single crystal substrate (eg, NdGaO 3 single crystal substrate), the temperature drop rate is 5 ° C. or less per minute, preferably 2 per minute. It was made to cool on the conditions of below ℃ (for example, 1.3 ℃ per minute). [Selection figure] None
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priorityDate 2011-02-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 32.