| abstract |
An object of the present invention is to provide an epitaxial silicon wafer manufacturing method that can simplify a mirror polishing process, increase productivity, reduce costs, and suppress surface roughness of an epitaxial film. An epitaxial film is vapor-grown on the surface of a mirror-finished silicon wafer that has not been finished mirror-polished. Thereafter, since the surface of the epitaxial film is etched with HCl gas, the mirror polishing process is simplified, the productivity is increased, the cost is reduced, and the surface roughness of the epitaxial film can be suppressed. [Selection] Figure 1 |