| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fa80eed27901ac84139c7a7109c21e17 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-45139
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-00014
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-00011 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-40 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-38 |
| filingDate |
2010-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7ae9b755afcef370a8db01ff221f2fde
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_be4d0bcb912fd72d11be51bb5a3014c7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5f06ef7cd9e9a0461097d652e4cb4098
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_17323325080eacd5af10c289d5b0614b |
| publicationDate |
2011-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2011086910-A |
| titleOfInvention |
Semiconductor light emitting device |
| abstract |
An electrical characteristic of an electrode formed on a semiconductor layer is improved. A semiconductor light emitting device according to the present invention includes an electrode layer; a first conductive semiconductor layer disposed on the electrode layer; an active layer disposed on the first conductive semiconductor layer; A light emitting structure including a second conductive type semiconductor layer disposed on the active layer; and an electrode disposed on the light emitting structure, wherein the electrode includes the second conductive type semiconductor layer. An ohmic contact layer in contact with an upper surface of the first ohmic contact layer; a first barrier layer disposed on the ohmic contact layer; a conductive layer disposed on the first barrier layer and including copper; and A second barrier layer disposed on the second barrier layer; and a bonding layer disposed on the second barrier layer. [Selection] Figure 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8686398-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017139477-A |
| priorityDate |
2009-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |