http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011082587-A

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filingDate 2011-01-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_238c7bd162b52da5b66ebef642a36d0e
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publicationDate 2011-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2011082587-A
titleOfInvention High efficiency gallium nitride based light emitting diodes by surface roughening
abstract 【Task】 A means for improving the light extraction efficiency is provided by roughening the surface of a GaN-based LED. [Solution]   In a gallium nitride (GaN) based light emitting diode (LED), light is extracted through the nitrogen surface (N surface) (42) of the LED. Also, the surface of the N face (42) is roughened into one or more hexagonal cones. Roughening the surface reduces repetitive light reflections inside the LED, so more light can be extracted from the LED. The surface of the N face (42) is roughened by anisotropic etching. This anisotropic etching may include dry etching and PEC etching. [Selection] FIG.
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014527306-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013138139-A
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