http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011082543-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0950e9df7f0e1b73efee1bda859951ad |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 |
| filingDate | 2010-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_faa6ec06f133f9e698da0ad694d5f856 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_35984123919287c783bbdedaaf2a3396 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f8e94ed15a0252a7e3816464c8fec417 |
| publicationDate | 2011-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2011082543-A |
| titleOfInvention | Manufacturing method of semiconductor device |
| abstract | A highly reliable semiconductor device with high integration, low cost, and high reliability is provided. A substrate including a first region MC and a surrounding second region PC, an insulating film formed on the second region PC, and an electrode formed on the surface of the substrate 1 in the first region MC And a dielectric film formed on the electrode and a counter electrode formed on the dielectric film, and the shape of the side wall of the insulating film includes a portion reflecting the outer peripheral shape of the side wall of the opposing electrode. [Selection] Figure 2 |
| priorityDate | 2010-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.