http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011071494-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02024 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02032 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76254 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-322 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate | 2010-08-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b59d14e35fac46e04cfe2b8798c1d7ac http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5fbb7b9de0a89e6b02a4ea495f48b631 |
| publicationDate | 2011-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2011071494-A |
| titleOfInvention | Method for regenerating semiconductor substrate, method for manufacturing regenerated semiconductor substrate, and method for manufacturing SOI substrate |
| abstract | An object is to provide a method suitable for the regeneration of a semiconductor substrate. Another object of one embodiment of the disclosed invention is to manufacture a regenerated semiconductor substrate using a method suitable for regenerating a semiconductor substrate. Another object of one embodiment of the disclosed invention is to manufacture an SOI substrate using the recycled semiconductor substrate. An etching process for removing the insulating layer on a semiconductor substrate in which a protrusion including a damaged semiconductor region and an insulating layer is present at a peripheral portion; a substance that oxidizes a semiconductor material constituting the semiconductor substrate; An undamaged semiconductor region is formed using a mixed solution including a substance that dissolves the oxidized semiconductor material, and a substance that controls an oxidation rate of the semiconductor material and a dissolution rate of the oxidized semiconductor material. On the other hand, the semiconductor substrate is regenerated by performing an etching process in which the damaged semiconductor region is selectively removed. [Selection] Figure 1 |
| priorityDate | 2009-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 40.