| abstract |
A thin film transistor having high reliability and excellent oxidation resistance is provided. A thin film transistor in which a gate electrode, a gate insulating layer, a semiconductor layer, a source electrode and a drain electrode are formed on a substrate, the alkali-soluble phenol resin (A) and a radiation sensitive compound. A protective film 8 made of a radiation-sensitive resin composition containing (B) is formed in contact with the gate insulating layer 4, the semiconductor layer 5, the source electrode 6 and the drain electrode 7. A thin film transistor characterized by the above. [Selection] Figure 1 |