| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D5-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2885
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D17-001
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76873
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D3-38 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D3-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D5-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D5-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2885
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D17-001
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D21-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D7-123
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76873 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-288
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D13-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D7-12 |
| filingDate |
2009-09-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e655fdfa4d3f000e1346bcd993eb9c5e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1f3c7f6c1d1e7355c33f019c21c0a0c8 |
| publicationDate |
2011-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2011063849-A |
| titleOfInvention |
Film formation method and storage medium |
| abstract |
PROBLEM TO BE SOLVED: To form a Cu film having high adhesion on a Co seed by suppressing Co elution when forming a Cu film by electrolytic plating using Co as a plating seed. To provide. A substrate having a Co film formed on a surface as a seed layer is prepared, and a Cu film is formed on the Co film of the substrate by electrolytic plating using a plating solution mainly composed of a copper sulfate solution on the Co film. In film formation, before immersing the substrate surface in the plating solution, a negative voltage is applied to the substrate such that the surface potential of Co is lower than the oxidation potential of Co. [Selection] Figure 2 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11549192-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10920335-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014111831-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10017869-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9909228-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011063848-A |
| priorityDate |
2009-09-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |