| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_268be9afa00cf55b5aa72b1612151ecb |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-1051
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-2047
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-076
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-8554
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B41J2-14274 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-39
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-09
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B41J2-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-187
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B41J2-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-316 |
| filingDate |
2009-08-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a0e0844031860175bfbe9524f117e704
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_af409595d0774c42be262cac09b2bb49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cba7a5c3ea4ca3842b6aac6cb7b110f2 |
| publicationDate |
2011-02-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2011040644-A |
| titleOfInvention |
Columnar structure film and film forming method therefor, piezoelectric element, liquid ejection device, and piezoelectric ultrasonic transducer |
| abstract |
A columnar structure film such as a piezoelectric film having excellent withstand voltage and excellent driving durability without requiring a complicated process is provided. A columnar structure film is a columnar structure film formed on a substrate and made up of a number of columnar bodies extending in a non-parallel direction with respect to the substrate surface of the substrate, and formed by a vapor phase growth method. When the maximum value of the average column diameter in the horizontal direction when viewed in the film thickness direction is GS max and the minimum value is GS min , GS max > 2.0 GS min is satisfied. In the film structure having a large value of GSmax / GSmin, the probability that the grain boundary in the film thickness direction penetrates from the lower surface to the upper surface of the film is reduced, and the leakage path is reduced, so that the withstand voltage is improved and the driving durability is improved. [Selection] Figure 8 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016103567-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014229902-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2016084365-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016157894-A |
| priorityDate |
2009-08-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |