http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011035126-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f56b5174f7d196258707ccf1d609796e |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate | 2009-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1b701b95796ec00f2e67b272047c628f |
| publicationDate | 2011-02-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2011035126-A |
| titleOfInvention | Semiconductor device and manufacturing method of semiconductor device |
| abstract | A semiconductor device having excellent controllability of device characteristics and a method for manufacturing the semiconductor device are provided. A semiconductor device according to the present embodiment includes a MOS transistor on a silicon substrate 101, and the MOS transistor is provided on a gate electrode (on a silicon substrate 101 with a gate insulating film 203 interposed therebetween). A metal electrode 206) and a gate electrode (metal electrode 206) on both sides of the silicon substrate, provided in the vicinity of the surface of the silicon substrate, and directly below the gate electrode so as to be in contact with the source region 106 and the drain region 109, and the source region 106 and the drain region 109. A channel region (germanium / carbon single crystal film 202) provided in the silicon substrate 101, and the channel region includes a different semiconductor (germanium) different from silicon. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111081780-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111081780-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10103226-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013026336-A |
| priorityDate | 2009-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 42.