| abstract |
An object is to reduce the resistance of each member included in a transistor, improve the on-state current of the transistor, and improve the performance of an integrated circuit. A semiconductor device having an n-type FET and a p-type FET provided on a single crystal semiconductor substrate through an insulating layer and separated by an element isolation insulating layer, each of which includes a semiconductor material. Including a channel formation region, a conductive region in contact with the channel formation region and including a semiconductor material, a metal region in contact with the conductive region, a gate insulating layer in contact with the channel formation region, a gate electrode in contact with the gate insulating layer, and a metal A source electrode or a drain electrode partially including a region. [Selection] Figure 1 |