| abstract |
In a method for manufacturing a semiconductor device, in which a plurality of metal films having a laminated structure are formed on a semiconductor substrate by an electroless plating method, a method for reducing the number of plating tanks located in a light-shielding environment is provided. A process for forming a metal film includes an electroless plating process including a reduction reaction using a first plating tank (step S52), and an electroless plating process using only a replacement reaction using a second plating tank (step). S54) and an electroless plating process (step S56) based only on a substitution reaction using the third plating tank. The electroless plating process including the reduction reaction using the first plating tank is performed in a light-shielding environment, and the electroless plating process using only the replacement reaction using the second plating tank and the third plating tank is performed in a non-light-shielding environment. Is called. [Selection] Figure 1 |