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filingDate 2009-07-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cd517c9e2f637b2cf2dad1c177eb9140
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publicationDate 2011-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2011023651-A
titleOfInvention Resistance variable nonvolatile memory element and method of manufacturing variable resistance nonvolatile memory element
abstract A variable resistance nonvolatile memory device capable of high integration and low power consumption is provided. In a memory device, at least an electrode 2a and an electrode 2b are disposed on a substrate 1, and a shell layer that is a p-type semiconductor is formed on an inorganic oxide nanowire such as MgO between the electrode 2a and the electrode 2b. The formed nanowire structure 3 is formed. Since the shell layer which is a p-type oxide semiconductor is formed in the inorganic oxide, the surface of the manufactured nanowire structure 3 is hardly oxidized. Examples of the inorganic oxide constituting the shell layer that is a p-type semiconductor include NiO, CoO, CuO, Ta2O5, and HfO2. [Selection] Figure 4
priorityDate 2009-07-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 20.