http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011014922-A
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_24aca9ded2638ea793d05360dde7a4a0 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-737 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331 |
filingDate | 2010-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_06e6b52614f7505cc90411e35f18446b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6df2203cd173a126a29679c635a8a722 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9f80c55bd60c3361074d975cda3d0f33 |
publicationDate | 2011-01-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2011014922-A |
titleOfInvention | Compound semiconductor wafer manufacturing method and compound semiconductor device |
abstract | An object of the present invention is to provide a method of manufacturing a compound semiconductor wafer for HBT in which the current gain does not greatly depend on the carrier concentration of a subcollector layer, and a semiconductor device using the same. When a sub-collector layer 41, a collector layer 42, a base layer 43, and an emitter layer 44 are vapor-phase grown on a GaAs substrate 2 by MOCVD, a semiconductor wafer 1 for HBT production is produced. As the collector layer 41, an n-type GaAs layer was grown on the GaAs substrate 2 with a V / III ratio exceeding 1.0 and 5 or less. The growth may be performed at a relatively low temperature of 620 ° C to 550 ° C. As a result, the crystallinity of the subcollector layer 41 is improved, and the current amplification factor β can be prevented from greatly changing depending on the carrier concentration of the subcollector layer 41. [Selection] Figure 1 |
priorityDate | 2010-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.