http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011014825-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-22 |
| filingDate | 2009-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d741a2b1585d8d54cc89f79ef4a0e0da http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_142328befea4514e0c15a9cb47f8bd03 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b19fd399abc9506a4fccd7018d1e98c4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9af1102c55fd7bb49d5ddc68f8b4e59e |
| publicationDate | 2011-01-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2011014825-A |
| titleOfInvention | Multi-wavelength semiconductor laser and manufacturing method thereof |
| abstract | A monolithic multi-wavelength semiconductor capable of easily producing a high-precision multi-wavelength semiconductor laser light source without requiring high-precision mechanical mounting for aligning optical axes of individual LDs emitting laser beams of different wavelengths A laser element is provided. A first composition modulation buffer layer 20 and a second composition modulation buffer layer 30 made of a GaAsN mixed crystal are respectively formed on a front surface 10a and a back surface b of a substrate 10 made of a GaAsN mixed crystal, and a first composition is formed. A blue-violet LD section 40 is formed on the modulation buffer layer 20, and an infrared LD section 50 and a red LD section 60 are formed on the second composition modulation buffer layer 30. Then, the first composition modulation buffer layer 20 is formed with a gradient composition in which the N atom content increases from the substrate 10 toward the first semiconductor layer 40, and the second composition modulation buffer layer 30 is formed from the substrate 10 to the first composition layer. The second semiconductor layer 50 and the third semiconductor layer 60 were formed with a gradient composition in which the N atom content decreases. [Selection] Figure 1 |
| priorityDate | 2009-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.