| abstract |
A method of manufacturing a semiconductor device capable of uniformly forming a thin silicon oxide film or the like having a high quality at a relatively low temperature is provided. In step 1, a semiconductor substrate is exposed to monosilane (SiH 4 ). Next, in Step 2, the remaining monosilane (SiH 4 ) is exhausted. In step 3, the semiconductor substrate is exposed to nitrous oxide plasma. Steps 1 to 3 are set as one cycle, and this cycle is repeated until a required film thickness is obtained, thereby forming a desired silicon oxide film. [Selection] Figure 1 |