| abstract |
PROBLEM TO BE SOLVED: To suppress oxidation of a metal film as a base when forming a high dielectric constant insulating film. An aluminum material is supplied to the processing chamber containing the substrate and exhausted, and an oxidation source or a nitriding source is supplied to the processing chamber and exhausted, and the substrate is formed on the surface of the substrate. The step of forming an insulating film containing aluminum on the electrode film, the step of supplying and exhausting a raw material into the processing chamber, and the step of supplying and exhausting an oxidizing source into the processing chamber are alternately performed, thereby including aluminum. A step of forming a high dielectric constant insulating film different from the insulating film containing aluminum on the insulating film; and a step of performing a heat treatment on the substrate on which the high dielectric constant insulating film is formed. [Selection] Figure 1 |