http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011009407-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73ebc284a55d5daf0e209d6186c9e65c |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52 |
| filingDate | 2009-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0342c0f8492d756a75d4b2b63db45523 |
| publicationDate | 2011-01-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2011009407-A |
| titleOfInvention | Semiconductor device, electronic component, and manufacturing method of semiconductor device |
| abstract | An electrical property of a through electrode is efficiently inspected. A method of manufacturing a semiconductor device according to the present invention includes a step of forming an electric circuit including a semiconductor element on a silicon substrate, and a silicon substrate that is provided through the silicon substrate and is electrically connected to the electric circuit. Forming a first through electrode 22, forming a second through electrode 23 provided through the silicon substrate 20 and short-circuited with the first through electrode 22 on the surface 20 a of the silicon substrate 20, and a silicon substrate 20 has a step of inspecting electrical characteristics between the first through electrode 22 and the second through electrode 23 on the back surface 20b. [Selection] Figure 3 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015524172-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011171607-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015170841-A |
| priorityDate | 2009-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 19.