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filingDate 2010-09-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fae89a8904582f09ff789720e765351e
publicationDate 2011-01-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2011008913-A
titleOfInvention Variable writing for non-volatile storage
abstract The amount of verification operation between write pulses is limited in order to improve the write speed. After erasing a plurality of nonvolatile memory elements, soft writing is executed to narrow an erase threshold section of the nonvolatile memory elements. During soft writing, the system soft-writes all sets except the number of write pulses to finish soft writing to the first set of non-volatile storage elements and the last set of non-volatile storage elements. The number of write pulses for ending is specified. These two numbers are used to characterize the threshold segment of the non-volatile storage element. This feature of the threshold segment and the step size of the write pulse are used to limit the number of verify pulses used in subsequent writes. [Selection] Figure 17
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