http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011006304-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a07d0b3e3169dd026ecd9113fc9cc4ad |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-20 |
| filingDate | 2009-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fc640f744b9f7d78d4170f6b459cef04 |
| publicationDate | 2011-01-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2011006304-A |
| titleOfInvention | Nitride semiconductor substrate and method for manufacturing the same |
| abstract | A nitride semiconductor substrate having a protective film formed on a surface capable of manufacturing a high-quality epitaxial wafer is provided. The nitride semiconductor substrate is heat-treated in an atmosphere containing air or oxygen, or the surface of the nitride semiconductor substrate is exposed to oxygen plasma, so that the main component is gallium oxide on the surface of the nitride semiconductor substrate. In addition, a protective film having a surface roughness square mean value of 5 nm or less is formed of indium oxide. The protective film prevents contamination from adhering to the substrate surface and can be easily removed simply by keeping it at a temperature of 1200 ° C or less in a hydrogen atmosphere. Therefore, abnormal growth of the epitaxially grown film and crystal defects caused by the contaminant are generated. To prevent. [Selection figure] None |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015527292-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012231103-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016117646-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2012141317-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9502241-B2 |
| priorityDate | 2009-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.