http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011003732-A

Outgoing Links

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-227
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343
filingDate 2009-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d563289dd945d1aa29ef69d5f2492d4a
publicationDate 2011-01-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2011003732-A
titleOfInvention Semiconductor optical device
abstract PROBLEM TO BE SOLVED: To provide a semiconductor optical device having a structure capable of suppressing deterioration of energization characteristics by suppressing diffusion of a p-type dopant into a light emitting layer on an end face of a semiconductor mesa portion. A semiconductor optical device 1 includes a semiconductor mesa portion M including a light emitting layer 23 and a p-type cladding layer 25, and a p-type buried region 13. The semiconductor mesa portion M includes a first mesa region Ma and a first mesa region Ma. There are second mesa regions Mb and Mc, and the first mesa region Ma is located between the second mesa regions Mb and Mc. p-type cladding layer 25 has a first portion 25 1 of the first mesa region Ma, second mesa region Mb, and a second portion 25 2 in Mc. p-type buried region 13 has a first portion 13 1 of the side surface of the first mesa region Ma, second mesa region Mb, and a second portion 13 2 on the side of Mc. In one of the p-type cladding layer 25 and the p-type buried region 13, the concentration of the p-type dopant in the second portion is lower than the concentration of the p-type dopant in the first portion. [Selection] Figure 1
priorityDate 2009-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 25.