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filingDate 2009-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2011-01-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2011001202-A
titleOfInvention Vanadium dioxide nanowire and method for producing the same, and nanowire device using vanadium dioxide nanowire
abstract VO 2 nanowire and nanowire device using the same Nanoparticles or nanodots made of transition metal atoms are formed on the substrate 1 as the growth catalyst 3, and VO 2 nanowires are formed on the substrate surface heated under reduced pressure by a vapor-liquid-solid (VLS) growth method [110]. ] Grows along the direction. When tetragonal TiO 2 is used as the substrate and the crystal plane is the (110) plane, the VO 2 nanowire 2a is oriented at 90 ° with respect to the plane of the substrate, and the crystal plane is the (100) plane and 45 °. The VO 2 nanowire 2b can be grown in the direction of. The formation region of nanowires can be controlled, and VO 2 nanowires with controlled diameter, growth direction, and length can be formed on the substrate with high density. [Selection] Figure 1
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015184187-A
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