| abstract |
The present invention provides, on a substrate, a single precursor containing a group III and group VI element, a precursor containing a group I metal, a precursor containing a group VI element or a gas containing a group VI element. Are supplied together to form an I-III-VI 2 compound thin film by a single metal organic chemical vapor deposition process. According to this, since the final thin film is formed by a single vapor deposition process compared to the conventional method, the process is simplified and economical, and the produced thin film has fewer internal pores and has a uniform surface. Therefore, it is useful as an absorption layer for solar cells. [Selection] Figure 2 |