| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2013-0073
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-71
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-72
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-51 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-1673
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-1659
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-1675
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B61-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0011
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-003 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L49-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C13-00 |
| filingDate |
2008-02-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2010-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2010519762-A |
| titleOfInvention |
Rectifier for memory array architecture based on crosspoint |
| abstract |
An asymmetrically programmed memory (such as a solid electrolyte material) used as a rectifying element to drive a symmetric or substantially symmetric resistive memory element in a cross-point memory architecture. The materials are listed. A solid electrolyte element (SE) has a very high resistance in the off state and a very low resistance in the on state (since it is a metal filament in the on state). These attributes make it a nearly ideal diode. During the current passage of the storage element (during programming / reading / erasing), the solid electrolyte material is also programmed to a low resistance state. The final state of the solid electrolyte material is returned to a high resistance state while ensuring that the final state of the memory material is the desired state. [Selection] Figure 4 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10121540-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10541025-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10115819-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9768234-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015220465-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9761635-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9318193-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10964388-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9633724-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10211397-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10210929-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11776626-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9698201-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9685483-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10096362-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9847130-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10079060-B2 |
| priorityDate |
2007-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |